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I2N60 (nELL) : Total 7 Pages

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SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon
device with current conduction capability of
12A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.8Ω @ VGS = 10V
Ultra low gate charge(54nC max.)
Low reverse transfer capacitance
(CRSS = 25pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
12
600
0.8 @ VGS = 10V
54
D
GDS
TO-220AB
(12N60A)
GDS
TO-220F
(12N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
TC=25°C
TC=100°C
lAR=12A,RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy (Note 2)
lAS=12A, L = 10mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TC=25°C
TO-220AB
TO-220F
TJ
TSTG
Operation junction temperature
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=12A, VDD=50V, L= 10mH, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 12A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
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Page 1 of 7
VALUE
600
600
±30
12
7.4
48
12
24
790
4.5
225
51
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)



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SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB
TO-220F
Min. Typ. Max.
0.56
2.4
62.5
62.5
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA, VGS = 0V
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS =VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
Gate threshold voltage
DYNAMIC CHARACTERISTICS
VGS = 10V, lD = 6A
VGS=VDS, ID=250μA
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
RG Gate resistance
SWITCHING CHARACTERISTICS
VDS = 25V, VGS = 0V, f =1MHz
VDS = 0V, VGS = 0V, f =1MHz
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V
ID = 12A, RGS = 25Ω (Note1,2)
tf
QG
QGS
QGD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V
ID = 12A, (Note1,2)
Min.
600
2
0.2
Typ.
0.7
0.6
1480
200
25
30
115
95
85
42
8.6
21
Max. UNIT
V
V/ºC
10
μA
100
100
-100
nA
0.8 Ω
4V
1900
270
35
1.2
pF
Ω
70
240
ns
200
180
54
nC
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SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 12A, VGS = 0V
1.4 V
IS(ISD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
12
A
48
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
ISD = 12A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
380 ns
3.5 μC
ORDERING INFORMATION SCHEME
Current rating, ID
12 = 12A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
12 N 60 A
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
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SEMICONDUCTOR
TEST CIRCUITS AND WAVEFORMS (Cont.)
I2N60 Series RRooHHSS
Nell High Power Products
Fig.2A Switching test circuit
VDS
VGS
RG
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
RL
D.U.T.
VDD
Fig.2B Switching Waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
Same Type as
12V 50kΩ D.U.T.
0.2µF
0.3µF
VDS
VGS
3mA
D.U.T.
VGS
10V
QGS
QG
QGD
Charge
Fig.4A Unclamped lnductive switching test circuit
VDS
L
10V
RG
tp
D.U.T.
VDD
Fig.4B Unclamped lnductive switching
waveforms
BVDSS
lAS
VDD
lD(t)
tp
VDS(t)
Time
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Page 4 of 7






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