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2SC4379U (SEMTECH) : Total 3 Pages

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ST 2SC4379U
NPN Silicon Epitaxial Planar Transistor
for power amplification applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1) When mounted on a 250 mm2 X 0.8 t ceramic substrate.
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
Value
50
50
5
2
0.4
0.5
1 1)
150
- 55 to + 150
Unit
V
V
V
A
A
W
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 2 V, IC =0.5 A
at VCE = 2 V, IC = 1.5 A
Current Gain Group O
Y
hFE
hFE
hFE
Collector Base Cutoff Current
at VCB = 50 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Emitter Breakdown Voltage
at IC = 10 mA
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 1 A, IB = 50 mA
Transition Frequency
at VCE = 2 V, IC = 500 mA
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
ICBO
IEBO
V(BR)CEO
VCE(sat)
VBE(sat)
fT
Cob
Min.
70
120
40
-
-
50
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
120
30
Max.
140
240
-
100
100
-
0.5
1.2
-
-
Unit
-
-
-
nA
nA
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated23/03/2012 Rev02



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ST 2SC4379U
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated23/03/2012 Rev02



No Preview Available !

[ Download PDF for PC ]

ST 2SC4379U
SOT-89 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated23/03/2012 Rev02






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