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2SD2271 (INCHANGE) : Total 2 Pages

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2271
DESCRIPTION
·High DC Current Gain-
: hFE= 500(Min)@ (VCE= 2V, IC= 5A)
·High Breakdown Voltage :VCEO(sus)=200VMin
APPLICATIONS
·Motor drive applications
·High current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
±12
A
ICP Collector Current-Peak
±18
A
IB Base Current
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
1A
2.0
W
30
150
-55~150
isc websitewww.iscsemi.cn
1



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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2771
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.25A; L=40mH
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
ICBO Collector Cutoff Current
VCB= 300V; IE= 0
IEBO Emitter Cutoff Current
VEB= 6V; IC= 0
hFE 1
DC Current Gain
IC= 5A; VCE= 2V
hFE 2
fT
DC Current Gain
Transition Frequency
IC= 10A; VCE= 2V
IC= 1A; VCE= 2V
Cob Collector Output Capacitance
VCB=10V,IE=0,f=1MHZ
MIN TYP. MAX UNIT
200 V
300 V
2.0 V
2.3 V
100 μA
50 150 mA
500 5000
100
40 MHz
200 pF
isc websitewww.iscsemi.cn
2






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