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2SC3518 (Renesas) : Total 5 Pages

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Silicon Power Transistors
2SC3518,3518-Z
NPN
DC/DC
VCEO 60 V IC(pulse) 7.0 A
hFE
hFE = 100 MIN. (VCE = 1.0 V, IC = 2.0 A)
VCE(sat) 0.3 V (IC = 2.0 A, IB = 0.2 A)
TA = 25°C
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT(TA = 25°C)
PT(TC = 25°C)
Tj
Tstg
1. PW 10 ms, Duty Cycle 50
2.
60
60
7.0
5.0
7.0
1.0
1.0
10
150
55~+150
V
V
V
A
A
A
W
W
°C
°C
6.5 ±0.2
5.0 ±0.2
4
123
1.1 ±0.2
mm
2.3 ±0.2
0.5 ±0.1
2.3 2.3
0.5
+0.2
0.1
0.5
+0.2
0.1
TO-251 MP-3
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
2.3 ±0.2
0.5 ±0.1
123
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
0.15 ±0.15
TO-252 MP-3Z
1.
2.
3.
4.
0 0.2 mm
D18263JJ3V0DS00
TC-5781A
July 2006 NS CP(K)
3
PDF
1985, 2006



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