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7NQ60E (Philips) : Total 15 Pages

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PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect transistor
Rev. 01 — 20 August 2002
Product data
1. Description
N-channel, enhancement mode field-effect power transistor.
Product availability:
PHP7NQ60E in TO-220AB (SOT78)
PHX7NQ60E in isolated TO-220AB.
2. Features
s Very fast switching
s Available in plastic and plastic full-pack package
s Low thermal resistance.
3. Applications
s DC to DC converters
s Switched mode power supplies
s Electronic lighting ballasts
s T.V. and computer monitor power supplies.
4. Pinning information
Table 1: Pinning - TO-220AB and isolated TO-220AB, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1 gate (g)
2 drain (d)
mb
mb
3 source (s)
mb
(TO-220AB
only)
mounting
base,
connected to
drain (d)
MBK106
123
TO-220AB (SOT78)
1 2 3 MBK110
isolated TO-220AB
g
MBB076
d
s



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Philips Semiconductors
PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
junction temperature
drain-source on-state resistance
Conditions
25 °C Tj 150 °C
Tc = 25 °C; VGS = 10 V
VGS = 10 V; ID = 3.5 A
Tj = 25 °C
Tj = 150 °C
6. Limiting values
Typ
-
[1] -
-
Max
600
7
150
0.94 1.2
2.4 2.9
Table 3: Limiting values
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Tc = 25 °C; VGS = 10 V;
Tc = 100 °C; VGS = 10 V;
Figure 3 and 4
[1]
[1]
IDM peak drain current
Tc = 25 °C; pulsed; tp 10 µs;
Figure 5 and 6
Ptot total power dissipation (TO-220AB) Tc = 25 °C; Figure 1
Ptot
total power dissipation (isolated
Tc = 25 °C; Figure 2
TO-220AB)
Tstg storage temperature
Tj junction temperature
Visol
R.M.S isolation voltage from all
f = 50 to 60 Hz; sinusoidal
three terminals to external heatsink waveform; R.H. 65%; clean and
dust-free; isolated TO-220AB only
Source-drain diode
IS source (diode forward) current (DC) Tc = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
EDS(AL)R repetitive drain-source avalanche
energy
IDS(AL)S non-repetitive drain-source
avalanche current
unclamped inductive load,
IAS = 6.5 A; tp = 2.3 ms;
Tj prior to avalanche = 25 °C;
VDD 50 V; RGS = 50 ;
VGS = 10 V
IAR = 7 A; tp = 2.5 µs;
Tj prior to avalanche = 25 °C;
RGS = 50 ; VGS = 10 V
Min
-
-
-
-
-
-
-
-
55
55
-
-
-
-
-
[1] For isolated TO-220AB limited only by maximum temperature allowed
Max
600
600
±30
7
4.5
28
147
37
+150
+150
2500
7
316
13
7
Unit
V
A
°C
Unit
V
V
V
A
A
A
W
W
°C
°C
V
A
mJ
mJ
A
9397 750 10153
Product data
Rev. 01 — 20 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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Philips Semiconductors
PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03ak23
120
Pder
(%)
80
03ak39
40 40
0
0 50 100 Tmb (°C) 150
0
0 50 100 Ths (°C) 150
Fig 1. TO-220AB normalized total power dissipation
as a function of mounting base temperature.
Fig 2. Isolated TO-220AB normalized total power
dissipation as a function of heatsink
temperature.
120
Ider
(%)
80
03ak26
120
Ider
(%)
80
03ak40
40 40
0
0 50 100 Tmb (°C) 150
0
0 50 100 TThhss((°°CC)) 150
Fig 3. TO-220AB normalized continuous drain current
as a function of mounting base temperature.
Fig 4. Isolated TO-220AB normalized continuous
drain current as a function of heatsink
temperature.
9397 750 10153
Product data
Rev. 01 — 20 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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Philips Semiconductors
PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect transistor
102
ID
(A)
10
limit RDSon = VDS / ID
1
DC
03ak28
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
10-1
10
102
VDS (V)
103
Tmb = 25 °C; IDM is single pulse.
Fig 5. TO-220AB safe operating area; continuous and peak drain currents as a function of drain-source voltage.
102
ID
(A)
101
limit RDSon = VDS / ID
10
10-1
DC
03ak29
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
10-2
10
102
VDS (V)
103
Ths = 25 °C; IDM is single pulse.
Fig 6. Isolated TO-220AB safe operating area; continuous and peak drain currents as a function of drain-source
voltage.
9397 750 10153
Product data
Rev. 01 — 20 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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