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K1095 (Hitachi Semiconductor) : Total 3 Pages

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2SK1095
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
TO–220FM
2
1
3
12 3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS ±20 V
———————————————————————————————————————————
Drain current
ID 25 A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
100
A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR
25 A
———————————————————————————————————————————
Channel dissipation
Pch**
30
W
———————————————————————————————————————————
Channel temperature
Tch 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW 10 µs, duty cycle 1 %
** Value at TC = 25 °C
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2SK1095
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSS 60
— V ID = 10 mA, VGS = 0
voltage
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±20
— V IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
— — ±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
— — 250 µA VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
1.0
2.0 V ID = 1 mA, VDS = 10 V *
———————————————————————————————————————————
Static drain to source on state RDS(on)
resistance
0.033 0.04
———————
ID = 15 A, VGS = 10 V *
——————————–
0.05 0.06
ID = 15 A, VGS = 4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs|
122 0—
S ID = 15 A, VDS = 10 V
———————————————————————————————————————————
Input capacitance
Ciss
1400 —
pF VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance
Coss
— 720 — pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss
— 220 — pF
———————————————————————————————————————————
Turn-on delay time
td(on)
— 15 — ns ID = 15 A, VGS = 10 V,
————————————————————————————————
Rise time
tr — 130 — ns RL = 2
————————————————————————————————
Turn-off delay time
td(off)
— 270 — ns
————————————————————————————————
Fall time
tf — 180 — ns
———————————————————————————————————————————
Body to drain diode forward
voltage
VDF
— 1.3 — V IF = 25 A, VGS = 0
———————————————————————————————————————————
Body to drain diode reverse
trr
— 135 — ns IF = 25 A, VGS = 0,
recovery time
diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
See characterist curves of 2SK972.
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2SK1095
Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
Maximum Safe Operation Area
500
300
100
30
10
OpaerrbeayatioRisnDliiSmn (itotheni)ds
1 ms
3
1.0
0.5
1
Ta = 25°C
0.3 1.0 3 10 30 100
Drain to Source Voltage VDS (V)
3
1.0 D = 1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1
0.05
0.03
0.01
10 µ
00.0.021
1
Shot
Pulse
100 µ
θch–c(t) = γS(t) · θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
D
=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
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