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X02400A (STMicroelectronics) : Total 5 Pages

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® X02xxxA
SENSITIVE GATE SCR
FEATURES
IT(RMS) = 1.25A
VDRM = 200V to 800V
Low IGT < 200 µA
DESCRIPTION
The X02xxxA series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required.
K
GA
TO92
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RM S)
IT( AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
Tl= 60°C
Mean on-state current
(180° conduction angle)
Tl= 60°C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 10 mA diG /dt = 0.1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
2mm from case
Value
1.25
0.8
25
22.5
2.5
30
- 40, + 150
- 40, + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C RGK = 1K
Voltage
Unit
B DMN
200 400 600 800 V
January 1995
1/5
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X02xxxA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient
Rth(j-l) Junction to leads for DC
Value
150
60
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
VRGM
tgd
IH
IL
VTM
IDRM
IRRM
dV/dt
tq
VD=12V (DC) RL=140
Tj= 25°C MIN
MAX
VD=12V (DC) RL=140
Tj= 25°C MAX
VD=VDRM RL=3.3k
RGK = 1 K
Tj= 125°C MIN
IRG =10µA
Tj= 25°C MIN
VD=VDRM ITM= 3 x IT(AV)
Tj= 25°C TYP
dIG/dt = 0.1A/µs IG = 10mA
IT= 50mA RGK = 1 K
Tj= 25°C MAX
IG=1mA RGK = 1 K
Tj= 25°C MAX
ITM= 2.5A tp= 380µs
Tj= 25°C MAX
VD = VDRM RGK = 1 K
VR = VRRM
Tj= 25°C MAX
Tj= 110°C MAX
VD=67%VDRM RGK = 1 KTj= 110°C TYP
ITM= 3 x IT(AV) VR=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
VD= 67%VDRM RGK = 1 K
Tj= 110°C MAX
Sensitivity
02 03
20
200 200
0.8
0.1
05
20
50
8
0.5
5
6
1.45
5
200
15 20 15
100
Unit
µA
V
V
V
µs
mA
mA
V
µA
µA
V/µs
µs
ORDERING INFORMATION
X
SCR TOP GLASS
CURRENT
2/5
02 03 M
SENSITIVITY
®
A
PACKAGE :
A = TO92
VOLTAGE
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Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
X02xxxA
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
P (W)
1.2
O
360
1.0
DC
0.8 = 180o
0.6 = 120o
= 90o
0.4 = 60o
0.2
0.0
0
= 30o
IT(AV)(A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
P (W)
1.2
1.0
0.8 Rth(j-a)
0.6
0.4
0.2
0.0
0
Tamb (oC)
20 40 60
Rth( j- l)
Tlead (oC)
-50
-70
-90
-110
80 100 120 140
Fig.3 : Average on-state current versus lead tem-
perature.
I T(AV) (A)
1.4
1.2
DC
1.0
0.8
= 180o
0.6
0.4
0.2
0.0
0
Tlead (oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.00
0.10
0.01
1E-3
1E-2
1E-1 1 E+0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
10. 0
9.0
Ih[Tj]
Ih[Tj=25 o C]
8.0
7.0
6.0
5.0 Igt
4.0
3.0
2.0 Ih
1.0
0.0
-40
Tj(oC)
-20 0 20
40
60
80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
25
20
Tj initial = 25oC
15
10
5
Number of cycles
0
1 10
100
100 0
3/5
®
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X02xxxA
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
I TSM (A). I2 t (A2s)
100
I TS M
10
I2 t
1
1
Tj initial = 25oC
tp(ms)
10
I TM (A)
100
Tj initial
25oC
10
Tj max
1 Tj max
Vto =1.05V
Rt =0.150
VTM(V)
0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
4/5
®
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