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N0604N (Renesas) : Total 8 Pages

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Data Sheet
N0604N
N-channel MOSFET
60 V, 82 A, 6.5 mΩ
R07DS0850EJ0100
Rev.1.00
Aug 27, 2012
Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
Low input capacitance
Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
High current
ID(DC) = ±82 A
RoHS Compliant
Ordering Information
Part No.
N0604N-S19-AY 1
Lead Plating
Pure Sn (Tin)
Tube
Packing
50 p/tube
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-220
1.9 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±82
±200
116
1.5
150
55 to +150
35
125
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
1.08
83.3
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 0 V, L = 100 μH
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 1 of 6
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N0604N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S–D)
trr
Qrr
MIN.
2.0
30
TYP.
5.1
4150
310
165
24
8
64
7
75
21
21
38
39
MAX.
1
±100
4.0
6.5
1.5
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 5 V, ID = 41 A
VGS = 10 V, ID = 41 A
pF VDS = 25 V,
pF VGS = 0 V,
pF f = 1 MHz
ns VDD = 30 V, ID = 41 A,
ns VGS = 10 V,
ns RG = 0 Ω
ns
nC VDD = 48 V,
nC VGS = 10 V,
nC ID = 82 A
V IF = 82 A, VGS = 0 V
ns IF = 82 A, VGS = 0 V,
nC di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 2 of 6
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N0604N
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
IDC(DC) = 82 A
IDC(pulse) = 200 A
100
10 R DS(on)Limited
DC
10 ms
PW= 100
s
1 Power Dissipation Limited
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
VDS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3 °C/W
10
1
0.1
0.01
0.1 m
Single pulse
1 m 10 m
Rth(ch-C) = 1.08 °C/W
100 m
1
PW - Pulse Width - s
10
100
1000
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 3 of 6
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N0604N
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
Pulsed
VGS = 10 V
200
100
0
01234
VDS - Drain to Source Voltage - V
5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
-50
VDS = 10 V
ID = 1.0 mA
0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
14
Pulsed
12
10
8
6 VGS = 10 V
4
2
0
1 10 100 1000
ID - Drain Current - A
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = 125 °C
75 °C
1 25 °C
–25 °C
0.1
0.01 Pulsed
VDS = 10 V
0.001
0123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = 125°C
75°C
25°C
–25°C
10
1
0.1
Pulsed
VDS = 5 V
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
ID = 41 A
15
10
5
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Page 4 of 6
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