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N0603N (Renesas) : Total 8 Pages

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N0603N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0559EJ0100
Rev.1.00
Nov 07, 2011
Description
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
Low input capacitance
Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
High current
ID(DC) = ±100 A
RoHS Compliant
Ordering Information
Part No.
N0603N-S23-AY 1
Lead Plating
Pure Sn (Tin)
Packing
Tube
50 p/tube
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-262
1.8 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±100
±400
156
1.5
150
55 to +150
55
300
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
0.80
83.3
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 0 V, L = 100 μH
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 1 of 6
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N0603N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
MIN.
2.0
35
TYP.
3.7
MAX.
1
±100
4.0
4.6
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 50 A
VGS = 10 V, ID = 50 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
7730
560
290
35
12
76
14
133
38
38
44
61
1.5
pF VDS = 25 V,
pF VGS = 0 V,
pF f = 1 MHz
ns VDD = 30 V, ID = 50 A,
ns VGS = 10 V,
ns RG = 0 Ω
ns
nC VDD = 48 V,
nC VGS = 10 V,
nC ID = 100 A
V IF = 100 A, VGS = 0 V
ns IF = 50 A, VGS = 0 V,
nC di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 2 of 6
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N0603N
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited
100
PW = 300 µs
1 ms
10 ms
10
Power Dissipation Limited
1
TC = 25°C
Single Pulse
0.1
0.1 1
10
100
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 0.80°C/W
1
0.1
0.01
0.1 m
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
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N0603N
400
300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
200
100
Pulsed
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
VDS = 10 V
ID = 1.0 mA
0
-50 0 50 100 150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
VGS = 10 V
8
6
4
2
Pulsed
0
1 10
100
ID - Drain Current - A
1000
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
TA = 125°C
10 75°C
25°C
25°C
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
012345
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = 125°C
75°C
10
25°C
25°C
1
0.1
0.01
0.01
VDS = 10 V
Pulsed
0.1 1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
ID = 50 A
20 Pulsed
15
10
5
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Page 4 of 6
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