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011N40P1 (KEC) : Total 7 Pages

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 400V, ID= 10.5A
Drain-Source ON Resistance :
RDS(ON)=0.53 @VGS =10V
Qg(typ.) =32.5nC
MAXIMUM RATING (Tc=25
CHARACTERISTIC
RATING
SYMBOL
KHB011N40F1 UNIT
KHB011N40P1
KHB011N40F2
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
400
30
10.5 10.5*
6.6 6.6*
42 42*
360
13.5
4.5
135 44
1.07 0.35
150
-55 150
V
V
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
0.93
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.86 /W
- /W
62.5 /W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB011N40P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB011N40P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB011N40F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB011N40F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/1
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KHB011N40P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=400V, VGS=0V,
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Vth
IGSS
RDS(ON)
VDS=VGS, ID=250 A
VGS= 30V, VDS=0V
VGS=10V, ID=5.25A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=320V, ID=10.5A
VGS=10V
(Note4,5)
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Reverse Transfer Capacitance
td(on)
tr
td(off)
tf
Ciss
Crss
VDD=200V
RL=20
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Source-Drain Diode Ratings
Coss
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=10.5A, VGS=0V
trr IS=10.5A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 5.7mH, IS=10.5A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 10.5A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
400 - - V
- 0.54 - V/
- - 10 A
2.0 - 4.0 V
- - 100 nA
- 0.5 0.53
- 32.5 37.5
- 6.4 - nC
- 13 -
- 23 45
- 65 140
ns
- 138 235
- 81 170
- 1472 1913
- 18.9 24.5 pF
- 168 218
- - 10.5
A
- - 42
- - 1.5 V
- 355 -
ns
- 4.0 -
C
2007. 5. 10
Revision No : 0
2/7
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KHB011N40P1/F1/F2
101
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5V
100
Fig1. ID - VDS
10-1
10-1
100 101
Drain - Source Voltage VDS (V)
Fig3. BVDSS - Tj
1.2
VGS = 0V
IDS = 250µA
1.1
1.0
0.9
0.8
-100
-50 0
50 100
Junction Temperature Tj ( C)
150
Fig5. IS - VSD
101
100 150 C 25 C
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source - Drain Voltage VSD (V)
2007. 5. 10
Revision No : 0
Fig2. ID - VGS
101
100 150 C
25 C
-55 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
2.0
1.5
VGS = 10V
1.0
VGS = 20V
0.5
0
0 5 10 15 20 25 30 35
Drain Current ID (A)
Fig6. RDS(ON) - Tj
3.0
VGS = 10V
2.5 IDS =5.25A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50 100
Junction Temperture Tj ( C)
150
3/7
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KHB011N40P1/F1/F2
2800
2400
2000
1600
1200
800
400
0
10-1
Fig7. C - VDS
Frequency = 1MHz
Ciss
Coss
Crss
100 101
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
(KHB011N40P1)
102
Operation in this area
is limited by RDS(ON)
10µs
101 100µs
1ms
100
Tc= 25 C
Tj = 150 C
10-1 Single nonrepetitive pulse
100 101
10ms
100ms
DC
102 103
Drain - Source Voltage VDS (V)
Fig11. ID - Tj
12
10
8
6
4
2
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
2007. 5. 10
Revision No : 0
12
ID = 10.5A
10
8
6
Fig8. Qg- VGS
VDS = 80V
VDS = 200V
VDS = 320V
4
2
0
0 5 10 15 20 25
Gate - Charge Qg (nC)
30
Fig10. Safe Operation Area
(KHB011N40F1, KHB011N40F2)
102
Operation in this area
is limited by RDS(ON)
10µs
101 100µs
1ms
100 10ms
10-1
Tc= 25 C
Tj = 150 C
10-2 Single nonrepetitive pulse
100 101
100ms
DC
102 103
Drain - Source Voltage VDS (V)
4/7
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