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N04L1630C2B (AMI SEMICONDUCTOR) : Total 12 Pages

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AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N04L1630C2B
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4Mb Ultra-Low Power Asynchronous CMOS SRAMs
256K × 16 bit POWER SAVER TECHNOLOGY TM
Overview
The N04L1630C2B is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N04L1630C2B is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
operating power while improving the performance
over standard SRAMs. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 256Kb x
16 SRAMs.
Features
• Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
1uA (Typical)
• Very low operating current
2.0mA at 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast output enable access time
30ns OE Access Time
55ns Random Access Time
30ns Page Mode Access Time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• RoHS Compliant TSOP and BGA packages
Product Family
Part Number
Package Type
Operating
Power
Speed
Temperature Supply (Vcc) Options
N04L1630C2BB2 48-BGA Green
-40oC to +85oC 2.7V - 3.6V
N04L1630C2BT2 44-TSOP II Green
55ns
70ns
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
1µA 2 mA @ 1MHz
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
1



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AMI Semiconductor, Inc.
Pin Configurations (4Mb)
A4
A3
A2
A1
A0
CE1
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP II
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
CE2
A8
A9
A10
A11
A17
N04L1630C2B
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123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin BGA (top)
Pin Descriptions
Pin Name
A0-A17
WE
CE1
CE2
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable 1 Input
Chip Enable 2 Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Lower Byte Data Input/Output
Upper Byte Data Input/Output
Power
Ground
Not Connected
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.



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AMI Semiconductor, Inc.
Functional Block Diagram
N04L1630C2B
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Address
Inputs
A1 - A4
Word
Address
Decode
Logic
Address
Inputs
A0,
A5 - A17
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
16K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux I/O0 - I/O7
and
Buffers
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXXX
XLXXXX
L HX XHH
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
High Z
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Standby
Write3
Read
Active
Standby
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.



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AMI Semiconductor, Inc.
N04L1630C2B
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Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
VCC
2.7 3.0 3.6 V
Data Retention Voltage
VDR Chip Disabled3
1.8
V
Input High Voltage
VIH
0.7Vcc
VCC+0.3 V
Input Low Voltage
VIL
–0.3 0.6 V
Output High Voltage
VOH
IOH = -100uA
IOH = -1mA
VCC–0.2
2.4
V
V
Output Low Voltage
VOL
IOL = 100uA
IOL = 2.1mA
0.2 V
0.4
Input Leakage Current ILI VIN = 0 to VCC
0.5 µA
Output Leakage Current
ILO OE = VIH or Chip Disabled
0.5 µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=VCCMax, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.5 3.0 mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
ICC2
VCC=VCCMax, VIN=VIH or VIL
Chip Enabled, IOUT = 0
10 15.0 mA
Page Mode Operating Supply Current
@ 70ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation)
ICC3
VCC=VCCMax, VIN=VIH or VIL
Chip Enabled, IOUT = 0
4 8 mA
Maximum Standby Current3
VIN = VCC or 0V
ISB1 Chip Disabled
tA= 85oC, VCC = 3.6 V
1 10.0 µA
Maximum Data Retention Current3
IDR
Vcc = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
5 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance
expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within
0.2 volts of either VCC or VSS.
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.






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