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N04L1618C2A (NanoAmp Solutions) : Total 10 Pages

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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04L1618C2Awww.DataSheet4U.com
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256Kx16 bit
Overview
Features
The N04L1618C2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N04L163WC1A, which is processed to
operate at higher voltages. The device operates
with two chip enable (CE1 and CE2) controls and
output enable (OE) to allow for easy memory
expansion. Byte controls (UB and LB) allow the
upper and lower bytes to be accessed
independently and can also be used to deselect
the device. The N04L1618C2A is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
0.7mA at 1.8V and 1µs (Typical)
• Low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number Package Type
N04L1618C2AB 48 - BGA
N04L1618C2AB2 48-BGA Green
Operating
Temperature
-40oC to +85oC
Power
Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
70ns @ 1.8V
1.65V - 2.2V
85ns @ 1.65V
0.5 µA
0.7 mA @
1MHz
(DOC# 14-02-016 REV G ECN# 01-1266)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1



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NanoAmp Solutions, Inc.
Pin Configuration
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin BGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
A0-A17
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
N04L1618C2Awww.DataSheet4U.com
(DOC# 14-02-016 REV G ECN# 01-1266)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.



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NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
N04L1618C2Awww.DataSheet4U.com
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
16K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXXX
XLXXXX
XXXXHH
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
High Z
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Standby2
Write3
Read
Active
Standby
Standby
Standby
Active -> Standby4
Active -> Standby4
Standby4
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from
any expernal influence.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC# 14-02-016 REV G ECN# 01-1266)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.



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NanoAmp Solutions, Inc.
N04L1618C2Awww.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 3.0
500
–40 to 125
-40 to +85
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
VCC
1.65 1.8
2.2 V
Data Retention Voltage
VDR Chip Disabled3
1.2
2.2 V
Input High Voltage
VIH
0.7VCC
VCC+0.3 V
Input Low Voltage
VIL
–0.3
0.3VCC V
Output High Voltage
VOH
IOH = 0.2mA
VCC–0.2
V
Output Low Voltage
VOL IOL = -0.2mA
0.3 V
Input Leakage Current ILI VIN = 0 to VCC
0.5 µA
Output Leakage Current
ILO OE = VIH or Chip Disabled
0.5 µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
0.7 3.0 mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
ICC2
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
8.0 17.0 mA
Page Mode Operating Supply Current
@ 70ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
ICC3
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
4.0
mA
diagram)
Read/Write Quiescent Operating Sup-
ply Current3
ICC4
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
10 µA
Maximum Standby Current3
VIN = VCC or 0V
ISB1 Chip Disabled
tA= 85oC, VCC = 2.2V
0.5 10.0 µA
Maximum Data Retention Current3
IDR
VCC = 1.2V, VIN = VCC or 0
Chip Disabled, tA= 85oC
10 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS.
(DOC# 14-02-016 REV G ECN# 01-1266)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.






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