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N02M083WL1A (NanoAmp Solutions) : Total 9 Pages

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NanoAmp Solutions, Inc.
N02M083WL1A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
www.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
The N02M083WL1A is an integrated memory
device intended for non life-support (Class 1 or 2)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N02M0818L2A, which has further
reliability processing for life-support (Class 3)
medical applications. The device operates with two
chip enable (CE1 and CE2) controls and output
enable (OE) to allow for easy memory expansion.
The N02M083WL1A is optimal for various
applications where low-power is critical such as
battery backup and hand-held devices. The device
can operate over a very wide temperature range of
-40oC to +85oC and is available in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Low standby current
3µA maximum at 3.6V
• Very low operating current
2 mA at 3.6V and 1Mhz (Typical)
• Very low Page Mode operating current
0.5mA at 3.6V and 1Mhz (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
N02M083WL1AN 32 - STSOP I
N02M083WL1AD Known Good Die -40oC to +85oC 2.3V - 3.6V 70ns @ 2.3V
Standby
Current
(ISB), Max
Operating
Current (Icc),
Max
3.0 µA 2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N02M083WL1A
STSOP
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 VSS
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
16K Page
x 16 word
x 8 bit
RAM Array
CE1
CE2
WE
OE
Control
Logic
N02M083WL1Awww.DataSheet4U.com
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1 CE2 WE
OE
I/O0 - I/O7
MODE
POWER
HXXX
XLXX
L H L X2
High Z
High Z
Data In
Standby1
Standby1
Write2
Standby
Standby
Active
L HH L
L HHH
Data Out
High Z
Read
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N02M083WL1Awww.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
Page Mode Operating Supply Current
@ 70 ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
VCC
VDR
VIH
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
ICC3
Maximum Standby Current3
ISB1
Maximum Data Retention Current3
IDR
Chip Disabled3
IOH = 0.2mA
IOL = -0.2mA
VIN = 0 to VCC
OE = VIH or Chip Disabled
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.3
1.8
VCC-0.6
–0.3
VCC–0.2
1.5
10.0
3.6
VCC+0.3
0.6
0.2
0.5
0.5
V
V
V
V
V
V
µA
µA
2.0 mA
12.0 mA
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
4.0
mA
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 2.3 V
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
2.0 20.0 µA
10.0 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N02M083WL1Awww.DataSheet4U.com
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A17)
Word Address (A0 - A3)
CE1
CE2
OE
Word 1
Open page
Word 2
...
Word 16
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23207-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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