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APTGU40TA120P (Advanced Power Technology) : Total 6 Pages

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APTGU40TA120P
www.DataSheet4U.com
Triple phase leg
PT IGBT Power Module
VCES = 1200V
IC = 40A @ Tc = 80°C
VBUS1
G1
E1
G2
E2
0/VBUS1
VBUS2
G3
E3
U
G4
E4
0/VBUS2
VBUS3
G5
E5
V
G6
E6
0/VBUS3
W
VBUS 1
VBUS 2
VBUS 3
G1 G3 G5
0/VBUS 1 E1 0/VBUS 2 E3 0/VBUS 3 E5
E2 E4 E6
G2 G4 G6
U VW
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7® Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 200kHz
range
- Soft recovery parallel diodes
- Low diode VF
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
SSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Switching Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
64
40
160
±20
277
170A @ 960V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6



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APTGU40TA120P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVCES Collector - Emitter Breakdown Voltage
ICES Zero Gate Voltage Collector Current
VGE = 0V, IC = 500µA
VGE = 0V
Tj = 25°C
VCE = 1200V Tj = 125°C
1200
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 40A
Tj = 25°C
Tj = 125°C
3.3
3.0
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = VCE, IC = 1mA
VGE = ±20V, VCE = 0V
3
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Max
500
2500
3.9
Unit
V
µA
V
6V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon1 Turn-on Switching Energy
Eon2 Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon1 Turn-on Switching Energy
Eon2 Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 300V
IC = 40A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 40A
RG = 5
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 40A
RG = 5
Min Typ Max Unit
3935
300 pF
55
185
25 nC
80
18
29
102
ns
38
900
1869
µJ
904
18
29 ns
151
79
900
3078
µJ
2254
X Eon2 includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
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APTGU40TA120P
www.DataSheet4U.com
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
IF(A V)
VF
Maximum Average Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VR=1200V
50% duty cycle
IF = 25A
VGE = 0V
IF = 25A
VR = 600V
di/dt =800A/µs
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1200
25
2.3
1.8
0.13
2.3
6
250
500
2.8
V
µA
A
V
µs
µC
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M6
Wt Package Weight
Min Typ Max Unit
0.45
1
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3 5 N.m
250 g
Package outline
5 places (3:1)
APT website – http://www.advancedpower.com
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Typical Performance Curve
Output characteristics (VGE=15V)
90
80 250µs Pulse Test
< 0.5% Duty cycle
70
60
50
40 TJ=125°C
30
20 TJ=25°C
10
0
0 123 4
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
160
250µs Pulse Test
140 < 0.5% Duty cycle
120 TJ=125°C
100
80
60
40
20
0
0
TJ=25°C
TJ=-55°C
24 68
VGE, Gate to Emitter Voltage (V)
10
On state Voltage vs Gate to Emitter Volt.
6
5
4 IC=80A
IC=40A
3
2 IC=20A
TJ = 25°C
1 250µs Pulse Test
< 0.5% Duty cycle
0
6 8 10 12 14 16
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
APTGU40TA120P
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Output Characteristics (VGE=10V)
90
80
250µs Pulse Test
< 0.5% Duty cycle
70
60
50 TJ=125°C
40
30
20 TJ=25°C
10
0
01234
VCE, Collector to Emitter Voltage (V)
5
18
16
IC = 40A
TJ = 25°C
14
Gate Charge
VCE=240V
VCE=600V
12
10
8
6 VCE=960V
4
2
0
0 40 80 120 160
Gate Charge (nC)
200
On state Voltage vs Junction Temperature
5
IC=80A
4
IC=40A
3
2 IC=20A
250µs Pulse Test
1 < 0.5% Duty cycle
VGE = 15V
0
0 25 50 75 100 125
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
100
80
60
40
20
0
-50
0 50 100
TC, Case Temperature (°C)
150
APT website – http://www.advancedpower.com
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