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APM2103SG (Anpec Electronics Coropration) : Total 8 Pages

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Dual P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-2.5A
RDS(ON)= 88m(typ.) @ VGS= -4.5V
RDS(ON)= 120m(typ.) @ VGS= -2.5V
R=
DS(ON)
160m
(typ.)
@
V=
GS
-1.8V
Super High Dense Cell Design
Reliable and Rugged
Applications
P Channel MOSFET
(7.8)D1
(5.6)D2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(2)G1
(4)G2
Ordering and Marking Information
(1)S1
(3)S2
P Channel MOSFET
APM2103
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2103 :
M2103
Package Code
SG : JSC70-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
1
www.anpec.com.tw



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Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID *
IDM *
IS *
TJ
TSTG
PD *
RθJA *
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
VGS=-4.5V
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
TA =25°C
TA =100°C
Thermal Resistance-Junction to Ambient
Notes: *Surface Mounted on 1in2 pad area, t 5sec.
Rating
-20
±12
-2.5
b
-10
-1.3
150
-55 to 150
1.14
0.45
110
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, IDS=250µA
VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS= VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-2.5A
RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A
VSD a Diode Forward Voltage
Gate Charge Characteristics b
VGS=-1.8V, IDS=-1A
ISD=-1.3A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-2.5A
APM2103SG
Unit
Min. Typ. Max.
-20 V
-1
µA
-30
-0.5 -0.7 -1
V
±10 µA
88 110
120 160 m
160 260
-0.8 -1.3 V
5.8 8
1.3 nC
1.1
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
2
www.anpec.com.tw



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Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Dynamic Characteristics b
Ciss Input Capacitance
VGS=0V,
Coss Output Capacitance
VDS=-10V,
Frequency=1.0MHz
Crss Reverse Transfer Capacitance
td(ON)
tr
td(OFF)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-10V, RL=10,
IDS=1A, VGEN=-4.5V,
RG=6
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=-2.5A
dlSD/dt =100A/µs
Notes:
a : Pulse test ; pulse width300µs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
APM2103SG
Unit
Min. Typ. Max.
360
80
50
8 15
22 41
29 53
32 59
14
6
pF
ns
ns
nc
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
3
www.anpec.com.tw



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Typical Characteristics
Power Dissipation
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 T =25oC
0.0 A
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
50
10
300µs
1 1ms
10ms
0.1 100ms
1s
DC
T =25oC
0.01 A
0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V)
Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
T =25oC,V =-4.5V
0.0 A
G
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
0.01
1E-4 1E-3 0.01
Mounted on 1in2 pad
R : 110 oC/W
θJA
0.1 1 10
Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
4
www.anpec.com.tw





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