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4920M (Advanced Power Electronics) : Total 6 Pages

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Advanced Power
Electronics Corp.
AP4920M
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
25V
25mΩ
7A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
± 20
7
5.7
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
62.5
Unit
/W
Data and specifications subject to change without notice
20020305



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AP4920M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS=±20V
ID=7A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=6Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
25 - - V
- 0.037 - V/
- - 25 mΩ
- - 35 mΩ
1 - 3V
- 14 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 10.5 - nC
- 1.9 - nC
- 7.5 - nC
- 8 - ns
- 9.5 - ns
- 25 - ns
- 13.5 - ns
- 395 - pF
- 260 - pF
- 105 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25, IS=2.1A, VGS=0V
Min. Typ. Max. Units
- - 1.67 A
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on Min. copper pad.



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AP4920M
20
10V
8.0V
6.0V
5.0V
15 V GS = 4 .0V
10
5
T C =25 oC
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20 10V
8.0V
6.0V
5.0V
15 V GS = 4 .0V
10
5
T C =150 oC
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
50
I D=7A
T C =25
40
30
20
10
3 4 5 6 7 8 9 10 11
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I D=7A
1.6 V GS =10V
1.4
1.2
1.0
0.8
0.6
-50
0 50 100
T j , Junction Temperature ( oC)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature



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AP4920M
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T c , Case Temperature ( oC)
Fig 5. Maximum Drain Current v.s.
Case Temperature
3
2
1
0
0 50 100 150
T c ,Case Temperature ( oC)
Fig 6. Typical Power Dissipation
100
10
1
0.1
0.01
0.1
T C =25 oC
Single Pulse
1 10
V DS (V)
1ms
10ms
100ms
1s
10s
DC
100
1
Duty Factor = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135 oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance






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