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Q1NC45R-AP (STMicroelectronics) : Total 15 Pages

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STD2NC45-1
STQ1NC45R-AP
N-channel 450V - 4.1- 1.5A - IPAK - TO-92
SuperMESH™ Power MOSFET
General features
Type
STD2NC45-1
STQ1NC45R-AP
VDSS
450V
450V
RDS(on)
<4.5
<4.5
ID
1.5A
0.5A
Pw
30W
3.1W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
New high voltage benchmark
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
– Switch mode low power supplies (SMPS)
– Low power, low cost CFL (compact
fluorescent lamps)
– Low power battery chargers
IPAK
3
2
1
TO-92 (ammopak)
Internal schematic diagram
Order codes
Part number
STD2NC45-1
STQ1NC45R-AP
Marking
D2NC45
Q1NC45R
Package
IPAK
TO-92
Packaging
Tube
Ammopak
July 2006
Rev 3
1/15
www.st.com
15



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Contents
Contents
STD2NC45-1 - STQ1NC45R-AP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STD2NC45-1 - STQ1NC45R-AP
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (1)
PTOT
dv/dt (2)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Rthj-lead
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-lead max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAS, VDD=50V)
Value
IPAK
450
±30
1.5
0.95
6
30
0.24
3
TO-92
0.5
0.315
2
3.1
0.025
–65 to 150
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
°C
Value
IPAK
4.1
100
--
TO-92
--
120
40
275 260
Unit
°C/W
°C/W
°C/W
°C
Value
1.5
25
Unit
A
mJ
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Electrical characteristics
2 Electrical characteristics
STD2NC45-1 - STQ1NC45R-AP
(TCASE = 25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
Drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test condictions
Min. Typ. Max. Unit
ID = 250µA, VGS = 0
450
V
VDS = Max rating
VDS = Max rating, TC = 125°C
1 µA
50 µA
VGS = ± 30V
±100 nA
VDS = VGS, ID = 250µA
2.3 3 3.7 V
VGS = 10V, ID = 0.5A
4.1 4.5
Table 5. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS > ID(on) x RDS(on)max,
ID = 0.5A
VDS = 25V, f = 1 MHz, VGS = 0
1.1
160
27.5
4.7
S
pF
pF
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 360V, ID = 1.5A,
VGS = 10V, RG = 4.7
(see Figure 18)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
7 nC
1.3 10 nC
3.2 nC
4/15






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