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2N5882 (ON Semiconductor) : Total 8 Pages

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ON Semiconductort
Silicon NPN High-Power
Transistor
. . . designed for general–purpose power amplifier and switching
applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min)
DC Current Gain —
hFE = 20 (Min) @ IC = 6.0 Adc
www.DataSheet4U.Lcoomw Collector — Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc
High Current — Gain–Bandwidth Product —
fT = 4.0 MHz (Min) @ IC = 1.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Symbol
θJC
Max
80
80
5.0
15
30
5.0
160
0.915
–65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max Unit
1.1 _C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re–registration reflecting these changes has been requested. All above values meet or
exceed present JEDEC registered data.
160
2N5882
ON Semiconductor Preferred Device
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
140
120
100
80
60
40
20
0
0 25
50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
2N5882/D



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2N5882
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎwww.DataSheet4UD.cComCurrent Gain (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 6.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =7.0Adc,IB =0.7Adc)
(IC = 15 Adc, IB = 3.75 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage (1) (IC = 15 Adc, IB = 3.75 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (2) (IC = 6.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain — Bandwidth Product (3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 100 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
(VCC = 30 Vdc, IC = 6.0 Adc,
IB1 = IB2 = 0.6 Adc See Figure 2)
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
hfe
tr
ts
tf
Min
80
35
20
4.0
4.0
20
Max Unit
Vdc
mAdc
1.0
mAdc
0.5
5.0
mAdc
0.5
1.0 mAdc
100
Vdc
1.0
4.0
2.5 Vdc
1.5 Vdc
— MHz
pF
400
——
0.7 µs
1.0 µs
0.8 µs
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%
(3) fT = |hfe| ftest.
VCC
-ā30 V
+10 V
0
-ā8.0 V
25 µs
tr, tf 10 ns
DUTY CYCLE = 1.0%
For PNP test circuit,
reverse all polarities.
RB
15
51
5.0 RC
SCOPE
D1
+ā7.0 V
FOR CURVES OF FIGURES 3 and 6,
RB and RC ARE VARIED TO OBTAIN
DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.
ą1N5825 USED ABOVE IB 100 mA
ąMSD6100 USED BELOW IB 100 mA
Figure 2. Switching Times Test Circuit
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.2 0.3
VCC = 30 V
IC/IB = 10
TJ = 25°C
tr
td @ VBE(off) 5.0 V
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
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2N5882
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05
0.02
0.03
0.02 SINGLE PULSE
0.01
0.01
0.01 0.02 0.03 0.05 0.1
www.DataSheet4U.com
θJC(t) = r(t) θJC
θJC = 1.1°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10 20 30
t, TIME (ms)
Figure 4. Thermal Response
50
100 200 300 500
1000
100
50 1.0 ms 0.5 ms 0.1 ms
30
20
10
5.0
5.0 ms
TJ = 200°C
dc
3.0
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
1.0 THERMAL LIMITATION @ TC = 25°C
0.5 (SINGLE PULSE)
0.3 CURVES APPLY BELOW RATED VCEO
0.2
0.1
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10
7.0 TJ = 25°C
5.0 VCC = 30 V
3.0
IC/IB = 0
IB1 = IB2
2.0
ts
1.0
0.7
0.5
0.3 tf
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
20
2000
TJ = 25°C
1000
700
500 Cib
300
200
Cob
100
60
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
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2N5882
1000
700
500
300 TJ = +150°C
200
25°C
100
70
50 -ā55°C
30
20
VCE = 4.0 V
10
0.2 0.3
www.DataSheet4U.com
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
20
2.0
1.6
IC = 3.0 A
6.0 A
1.2
TJ = 25°C
12 A
0.8
0.4
0
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IB, BASE CURRENT (mAdc)
2.0 3.0
Figure 9. Collector Saturation Region
2.0
TJ = 25°C
1.6
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
0
0.2 0.3
VCE(sat) @ IC/IB = 10
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltage
20
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