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J117 (Hitachi Semiconductor) : Total 8 Pages

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2SJ117
Silicon P-Channel MOS FET
ADE-208-1180 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
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Features
High speed switching
Good frequency characteristics
Wide area of safe operation
Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S



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2SJ117
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. Value at TC = 25°C
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Symbol
VDSS
VGSS
ID
I D(pulse)
I DR
Pch*1
Tch
Tstg
Ratings
–400
±20
–2
–4
–2
40
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –400
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–2.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
0.4
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ
5
0.7
520
110
15
10
25
45
35
–0.8
300
Max
±1
–1
–5.0
7
Unit
V
µA
mA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = –320 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –1 A, VGS = –15 V*1
ID = –1 A, VDS = –20 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –2 A, VGS = –15 V,
RL = 15
IF = –1 A, VGS = 0
IF = –1 A, VGS = 0,
diF/dt = 100 A/µs
2



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Power vs. Temperature Derating
60
40
20
0 50 100
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150
Typical Output Characteristics
–2.0
–15 V
–6 V
–1.6
TC = 25°C
–5 V
–1.2
–4.5 V
–0.8
–0.4
–4 V
VGS = –3 V
0 –4 –8 –12 –16 –20
Drain to Source Voltage VDS (V)
2SJ117
Maximum Safe Operation Area
–10
ID (peak)
–3
ID (max)
–1.0
–0.3
–0.1
Ta = 25°C
10 µs
DC OpePraWtio=n1(0Tms1(100Shµost)
C = 25°C)
–0.03
–1 –3 –10 –30 –100 –300 –1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–5
VDS = –20 V
Pulse Test
–4
TC = –25°C
25°C
–3 75°C
–2
–1
0 –2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
3



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2SJ117
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–20
–16
–12
–2 A
–8
–4
Pulse Test
–1 A
ID = –0.5 A
0 –4 –8 –12 –16 –20
www.DataSheet4U.com Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
VGS = 15 V
ID = –1 A
8
6
4
2
0
–40
0 40 80 120
Case Temperature TC (°C)
160
Forward Transfer Admittance
vs. Drain Current
5
VDS = –20 V
Pulse Test
2 Ta = –25°C
1.0
0.5 75°C 25°C
0.2
0.1
0.05
–0.2
–0.5 –1.0 –2 –5 –10 –20
Drain Current ID (A)
1,0000
3,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1,000
300
Ciss
100
Coss
30
10 Crss
3
1
0 –40 –80 –120 –160 –200
Drain to Source Voltage VDS (V)
4






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