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K06N60 (Infineon) : Total 16 Pages

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SKP06N60
SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
Designed for: Motor controls, Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
(TO-220AB)
Isolated TO-220, 2.5kV, 60s
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3-31 / -111
(FullPAK)
Type
SKP06N60
SKA06N60
VCE IC VCE(sat) Tj Marking Package
600V
6A
2.3V
150C K06N60 PG-TO-220-3-1
600V
5A
2.3V
150C K06N60 PG-TO-220-3-31 / -111
1 J-STD-020 and JESD-022
1
Rev. 2.4 12.06.2013



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Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 600V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
TC = 25C
Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
SKP06N60
SKA06N60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
M
Tj , Tstg
Ts
Value
Unit
SKP06N60 SKA06N60
600 600 V
A
12 9
6.9 5.0
24 24
24 24
12 12
66
24 24
20 20 V
s
10 10
W
68 32
0.6 0.5 Nm
-55...+150 -55...+150 C
260 260 °C
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
3 Maximum mounting processes: 3
2
Rev. 2.4 12.06.2013



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SKP06N60
SKA06N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol Conditions
Max. Value
Unit
SKP06N60 SKA06N60
RthJC
RthJCD
RthJA
PG-TO-220-3-1
PG-TO220-3-31 /-111
1.85
3.5
62
3.9 K/W
5.0
65
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Value
Typ.
Unit
max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500A
VGE = 15V, IC=6A
Tj=25C
Tj=150C
VGE=0V, IF=6A
Tj=25C
Tj=150C
IC=250A,VCE=VGE
VCE=600V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=6A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=6A
VGE=15V
VGE=15V,tSC10s
VCC 600V,
Tj 150C
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
2.0
2.3
1.4
1.25
4
-
-
-
4.2
350
38
23
32
7
60
-V
2.4
2.8
1.8
1.65
5
A
20
700
100 nA
-S
420 pF
46
28
42 nC
- nH
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
3
Rev. 2.4 12.06.2013



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SKP06N60
SKA06N60
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,
R G =50,
L1) =180nH,
C1) =250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=200V, IF=6A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
25
18
220
54
0.110
0.105
0.215
30
22
264
65
0.127
0.137
0.263
ns
mJ
200 - ns
17 -
183 -
200 - nC
2.8 - A
180 - A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150C
VCC=400V,IC=6A,
VGE=0/15V,
RG=50,
L1)=180nH,
C1)=250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=200V, IF=6A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
24
17
248
70
0.167
0.153
0.320
29
20
298
84
0.192
0.199
0.391
ns
mJ
290 - ns
27 -
263 -
500 - nC
5.0 - A
200 - A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
4 Rev. 2.4 12.06.2013






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