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2SC5556 (Panasonic Semiconductor) : Total 3 Pages

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2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Features
Low noise figure NF
High transition frequency fT
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
10
2
80
300
150
55 to +150
V
V
V
mA
mW
°C
°C
Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.0 mm in thickness
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 3K
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
10
V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0
1 µA
Forward current transfer ratio
hFE VCE = 8 V, IC = 20 mA
110 250
Transition frequency
fT VCE = 8 V, IC = 20 mA, f = 800 MHz
5
6
GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.9 1.2
pF
Foward transfer gain
Maximum unilateral power gain
Noise figure
S21e2
GUM
NF
VCE = 8 V, IC = 20 mA, f = 800 MHz
VCE = 8 V, IC = 20 mA, f = 800 MHz
VCE = 8 V, IC = 20 mA, f = 800 MHz
7.5 10.0
11.5
1.7
dB
dB
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00278BED
1



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PC Ta
350
300
250
200
150
100
50
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
90 Ta = 25°C
IB = 600 µA
80
500 µA
70
400 µA
60
50 300 µA
40
200 µA
30
20 100 µA
10
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 10
0.1 Ta = 85°C
25°C
25°C
0.01
1
10 100
Collector current IC (mA)
200
180
160
140
120
100
80
60
40
20
0
1
hFE IC
Ta = 85°C
VCE = 8 V
25°C
25°C
10 100 1 000
Collector current IC (mA)
Cob VCB
10
f = 1 MHz
Ta = 25°C
1
0.1
0 5 10 15 20 25
Collector-base voltage VCB (V)
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL






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