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J13009 (Fairchild Semiconductor) : Total 6 Pages

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March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1 TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP Collector Current (Pulse)
IB Base Current
PC Collector Dissipation (TC = 25°C)
TJ Junction Temperature
TSTG
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
700
400
9
12
24
6
100
150
-65 ~ 150
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Device Item (notes_2)
FJP13009
FJP13009H2TU
FJP13009TU
Device Marking
J13009
J130092
J13009
Package
TO-220
TO-220
TO-220
Packing Method
Bulk
TUBE
TUBE
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
Units
V
V
V
A
A
A
W
°C
°C
Qty(pcs)
1,200
1,000
1,000
©2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
1
www.fairchildsemi.com



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Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
VCEO(sus)
IEBO
hFE
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE (sat)
Cob
fT
tON
tSTG
tF
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 5A (hFE1)
VCE = 5V, IC = 8A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 8A
IB1 = - IB2 = 1.6A, RL = 15,6
* Pulse Test: PW 300µs, Duty Cycle 2%
hFE Classification
Classification
hFE1
H1
8 ~ 17
Min.
400
8
6
4
Typ.
180
Max
1
40
30
1
1.5
3
1.2
1.6
1.1
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
H2
15 ~ 28
FJP13009 Rev. B
2 www.fairchildsemi.com



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Typical Performance Characteristics
100
VCE = 5V
10
1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
100
1000
100
10
1
0.1 1
10 100 1000
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000
1000
VCC=125V
IC=5IB
tSTG
100
0.1
tF
1 10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
100
10
1 VBE(sat)
IC = 3 IB
0.1
VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
1000
100
VCC=125V
IC=5IB
tR
tD, VBE(off)=5V
10
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
100
100
10
1
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Forward Bias Safe Operating Area
FJP13009 Rev. B
3 www.fairchildsemi.com



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Typical Performance Characteristics (Continued)
100
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
10
1
0.1
0.01
10
100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
10000
Figure 7. Reverse Bias Safe Operating Area
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 8. Power Derating
FJP13009 Rev. B
4 www.fairchildsemi.com






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