DatasheetBay.com



9018 (Shanghai SIM-BCD Semiconductor) : Total 1 Pages

No Preview Available !

[ Download PDF for PC ]

9018
9018 Silicon NPN Epitaxial Transistor
Description :The 9018 is designed for UHF general amplifier applications
Features: Excellent hFE Linearity
Excellent fT characteristic
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
Emitter
360um×360um
210±20um
φ65um
φ65um
AlSiCu
Au (As)
50um
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE
VCB=20V, IE=0
VEB=3V, IC=0
IC=0.1mA
IC=1mA
IE=0.1mA
VCE=5V, IC=1mA
Min Max
0.1
0.1
30
20
5
60 200
Collector Saturation Voltage
VCE(sat) IC=10mA,IB=1mA
0.3
Unit
uA
uA
V
V
V
V
May.2004
Version :0.0
Page 1 of 1






[ Download PDF for PC ]






0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
* 2015 :: DatasheetBay.com :: DatasheetBay