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X0205NA1BA2 (STMicroelectronics) : Total 6 Pages

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®
SENSITIVE
X02 Series
1.25A SCRs
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
1.25 A
VDRM/VRRM
600 and 800
V
IGT
50 to 200
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X02 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interruptors, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
Available in though-hole or surface-mount
packages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduced power losses and high reliability in harsh
environments.
A
G
K
TO-92
(X02xxA)
SOT-223
(X02xxN)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
TO-92
SOT-223
TO-92
SOT-223
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TI = 55°C
Ttab = 95°C
TI = 55°C
Ttab = 95°C
Tj = 25°C
Tj = 25°C
Value
1.25
0.8
25
22.5
2.5
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
1.2
0.2
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
September 2000 - Ed: 3
1/6



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X02 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vto
Rd
IDRM
IRRM
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1 k
IG = 1 mA RGK = 1 k
VD = 67 % VDRM RGK = 1 k
ITM = 2.5 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 1 k
Tj = 125°C
Tj = 110°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
X02xx
02
-
200
0.8
0.1
8
05
20
50
5
6
10 15
1.45
0.9
200
5
500
Unit
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
THERMAL RESISTANCES
Symbol
Rth(j-l)
Rth(j-t)
Rth(j-a)
Junction to leads (DC)
Junction to tab (DC)
Junction to ambient (DC)
Parameter
S = 5 cm²
S = Copper surface under tab
PRODUCT SELECTOR
Part Number
X0202MA
X0202MN
X0202NA
X0202NN
X0205MA
X0205MN
X0205NA
X0205NN
600 V
X
X
X
X
Voltage
800 V
X
X
X
X
TO-92
SOT-223
TO-92
SOT-223
Sensitivity
200 µA
200 µA
200 µA
200 µA
50 µA
50 µA
50 µA
50 µA
Value
60
25
150
60
Unit
°C/W
Package
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
2/6



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X02 Series
ORDERING INFORMATION
X
SENSITIVE
SCR
SERIES
CURRENT: 1.25A
02 02 M A Blank 1BA2
VOLTAGE:
M: 600V
N: 800V
SENSITIVITY:
02: 200µA
05: 50µA
PACKAGE:
A: TO-92
N: SOT-223
PACKING MODE:
1BA2: TO-92 Bulk
2BL2: TO-92 Ammopack
5BA4: SOT-223 Tape & Reel
OTHER INFORMATION
Part Number
X02xxyA 1BA2
X02xxyA 2BL2
X0202yN 5BA4
X0205yN 5BA4
Marking
X02xxyA
X02xxyA
X2y
X5y
Note: xx = sensitivity, y = voltage
Weight
0.2 g
0.2 g
0.12 g
0.12 g
Base Quantity
2500
2000
1000
1000
Packing mode
Bulk
Ammopack
Tape & reel
Tape & reel
Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2-1: Average and D.C. on-state current
versus lead temperature (SOT-223/TO-92).
P(W)
1.2
1.0
0.8
0.6
0.4
0.2
IT(av)(A)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
IT(av)(A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
SOT-223
TO-92
SOT-223
TO-92
Tlead or Tlab(°C)
50 75
100
125
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X02 Series
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
IT(av)(A)
1.4
1.2 SOT-223
1.0
SOT-223
0.8
0.6 TO-92
0.4
0.2
0.0
0
TO-92
25
Tamb(°C)
50 75
100 125
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
0.10
SOT-223
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
Tj(°C)
0.00
-40 -20 0 20 40 60 80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
10.0 dV/dt[Rgk]/dV/dt [Rgk=1k]
Tj = 125°C
VD = 0.67xVDRM
1.0
Rgk(k)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1 k]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
Rgk(k)
1E-1
1E+0
Tj = 25°C
1E+1
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk = 1k]
20
18
16
14
12
10
8
6
4
2 Cgk(nF)
0
0 2 4 6 8 10 12 14 16 18 20 22
4/6






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