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X00602MA1AA2 (STMicroelectronics) : Total 5 Pages

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®
SENSITIVE
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
0.8
600
200
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X006 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interrupters, overvoltage
crowbar protection in low power supplies,
capacitive ignition circuits, ...
X00602MA
0.8A SCRs
A
G
K
KG A
TO-92
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
Parameter
RMS on-state current (180° conduction angle)
IT(AV) Average on-state current (180° conduction angle)
ITSM
Non repetitive surge peak on-state
current
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
tp = 10 ms
tp = 10ms
F = 60 Hz
tp = 20 µs
Value
Tl = 85°C
0.8
Tl = 85°C
Tj = 25°C
Tj = 25°C
0.5
10
9
0.25
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
1
0.1
- 40 to + 125
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
January 2002 - Ed: 5
1/5



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X00602MA
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1 k
IG = 1 mA RGK = 1 k
VD = 67 % VDRM RGK = 1 k
ITM = 1 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 1 k
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
X00602MA
15
200
0.8
0.2
5
5
6
25
1.35
0.85
245
1
100
Unit
µA
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
THERMAL RESISTANCES
Symbol
Rth(j-l)
Rth(j-a)
Junction to lead (DC)
Junction to ambient (DC)
Parameter
Value
70
150
Unit
°C/W
°C/W
PRODUCT SELECTOR
Part Number
X00602MA
Voltage
600 V
Sensitivity
200 µA
Package
TO-92
ORDERING INFORMATION
X
SENSITIVE
SCR
SERIES
CURRENT: 0.8A
006 02 M A Blank 1AA2
VOLTAGE:
M: 600V
PACKAGE:
A: TO-92
SENSITIVITY:
02: 200µA
PACKING MODE:
1AA2: Bulk
2AL2: Ammopack
5AL2: Tape & reel
OTHER INFORMATION
Part Number
X00602MA 1AA2
X00602MA 2AL2
X00602MA 5AL2
Marking
X0602MA
X0602MA
X0602MA
Weight
0.2 g
0.2 g
0.2 g
Base Quantity
2500
2000
2000
Packing mode
Bulk
Ammopack
Tape & reel
2/5



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X00602MA
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
0.65
0.60 α = 180°
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0
0.1
360°
IT(av)(A)
0.2 0.3 0.4
α
0.5
0.6
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
IT(av)(A)
1.0
0.9
0.8 D.C.
0.7
0.6 α = 180°
0.5
0.4
0.3
0.2
0.1
0.0
0
25
Tamb(°C)
50 75
100 125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C]
1.6
1.4
1.2
1.0
0.8
0.6 IGT
0.4
0.2 Tj(°C)
0.0
-40 -20 0 20 40 60 80
IH & IL
100 120 140
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
IT(av)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
D.C.
α = 180°
25
Tlead( °C)
50 75
100 125
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K = [Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk]/IH[Rgk=1k]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
1E-1
Rgk(k)
1E+0
1E+1
1E+2
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X00602MA
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk]/dV/dt[Rgk=1k]
1E+2
1E+1
1E+0
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values).
dV/dt[Cgk]/dV/dt[Rgk=1k]
20
10
5
1E-1
1E-2
1E-2
Rgk(k)
1E-1
1E+0
1E+1
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
10
9
8
7
Nonrepetitive
6 Tjinitial=25°C
5
4 Repetitive
Tamb=25°C
3
2
1
0
1 10
tp=10ms
Onecycle
Number of cycles
100 1000
2
Cgk(nF)
1
12
5 10
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A),I 2t(A2s)
100.0
ITSM
Tj initial = 25 °C
10.0
1.0
0.1
0.01
tp(ms)
0.10 1.00
I2t
10.00
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
1E+1
Tj max.:
Vto = 0.85V
Rd = 245m
1E+0
Tj = Tjmax.
1E-1
Tj = 25°C
VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5
4/5






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