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Z0103MA (STMicroelectronics) : Total 12 Pages

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Features
On-state rms current, IT(RMS) 1 A
Repetitive peak off-state voltage, VDRM/VRRM
600 or 800 V
Triggering gate current, IGT (Q1) 3 to 25 mA
Description
The Z01 series is suitable for general purpose AC
switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small
lamp control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performance when driven
directly through microcontrollers.
Z01
Standard 1A Triacs
A2
G
A1
A2
A1
TO-92
Z01xxA
A2
G
G
A2
A1
SOT-223
Z01xxN
A2
A1
G
SMBflat-3L
Z01xxMUF
December 2010
Doc ID 7474 Rev 10
1/12
www.st.com
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Characteristics
1 Characteristics
Z01
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
On-state rms current
(full sine wave)
SOT-223
TO-92
SMBflat-3L
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25 °C) F = 60 Hz
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
F = 120 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Ttab = 90 °C
TL = 50 °C
Ttab = 107 °C
t = 20 ms
t = 16.7 ms
1
8
8.5
0.35
Tj = 125 °C
20
Tj = 125 °C
Tj = 125 °C
1
1
- 40 to + 150
- 40 to + 125
A
A
A²s
A/µs
A
W
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
Z01
03 07 09 10
Unit
IGT (1)
VGT
VGD
IH (2)
VD = 12 V,
RL = 30 Ω
VD = VDRM,
RL = 3.3 kΩ,
Tj = 125 °C
IT = 50 mA
IL IG = 1.2 IGT
I - II - III
IV
ALL
MAX.
MAX.
3
5
5 10
7 10
1.3
25
mA
25
V
ALL MIN. 0.2 V
MAX. 7 10 10 25 mA
I - III - IV
7 10 15 25
MAX.
mA
II 15 20 25 50
dV/dt (2)
VD = 67% VDRM gate open
Tj = 110 °C
MIN.
(dV/dt)c (dI/dt)c = 0.44 A/ms,
(2) Tj = 110 °C
MIN.
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
10 20
0.5 1
50 100 V/µs
2 5 V/µs
2/12 Doc ID 7474 Rev 10



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Z01 Characteristics
Table 3. Static characteristics
Symbol
Test conditions
VTM(1)
Vto (1)
Rd (1)
ITM = 1.4 A, tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
1. For both polarities of A2 referenced to A1.
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MAX.
MAX.
Table 4.
Symbol
Thermal resistances
Parameter
Rth(j-t)
Rth(j-t)
Rth(j-I)
Junction to tab (AC)
Junction to tab (AC)
Junction to lead (AC)
Rth(j-a) Junction to ambient
1. S = copper surface under tab.
S(1) = 5 cm²
SOT-223
SMBflat-3L
TO-92
SOT-223
SMBflat-3L
TO-92
MAX.
Value
1.6
0.95
400
5
0.5
Unit
V
V
mΩ
µA
mA
Value
25
14
60
60
75
150
Unit
°C/W
Figure 1.
Maximum power dissipation
versus on-state rms current
(full cycle)
Figure 2.
On-state rms current versus lead
(TO-92) or tab (SOT-223, SMBflat-
3L) temperature (full cycle)
P(W)
1.50
α=180 °
1.25
1.00
0.75
0.50
0.25
180°
IT(RMS)(A)
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IT(RMS)(A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
SOT-223
TO-92
SMBF3L
Tl or Ttab(°C)
50 75
100
125
Doc ID 7474 Rev 10
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Characteristics
Z01
Figure 3.
On-state rms current versus
ambient temperature (free air
convection full cycle)
IT(RMS)(A)
1.2
1.0 Rth(j-a) = 60°C/W
(SOT-223)
0.8
Rth (j-a) = 100°C/W
(SMBflat-3L)
0.6
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(Zth(j-a))
K=[Zth(j-a)/Rth(j-a)]
1.00
Z01xxA
Z01xxMUF
Copper surface area
= 5cm²
0.10
Z01xxN
0.4 Rth(j-a) = 150°C/W
(TO-92)
0.2
0.0
0
Tamb (°C)
0.01
tp(s)
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
25 50 75 100 125
Figure 5.
Relative variation of holding
Figure 6.
current and latching current versus
junction temperature (typ. values)
Relative variation of gate trigger
current (IGT) and voltage (VGT)
versus junction temperature
IH, IL [Tj] /IH, IL [Tj=25°C]
2.5
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
3.0
2.0
1.5
1.0
IL
0.5
IH
Tj (°C)
0.0
-50 -25 0 25 50 75 100 125
2.5
IGT Q1-Q2
2.0
IGT Q3
IGT Q4
1.5
1.0 VGT Q1-Q2-Q3-Q4
0.5
0.0
-50
-25
0
Tj(°C)
25 50
75 100 125
Figure 7.
Surge peak on-state current versus Figure 8.
number of cycles
Non-repetitive surge peak
on-state current and corresponding
value of I2t sinusoidal pulse width
9 ITSM(A)
8
7
6
5
4
3
2
Repetitive
1 Tamb = 95 °C
0
1
Non repetitive
Tjinitial = 25 °C
10
T = 20 ms
One cycle
Number of cycles
100 1000
ITSM (A), I2t (A2s)
100.0
dI/dt limitation:
20A/µs
10.0
Tj initial = 25°C
ITSM
1.0
0.1
0.01
tp (ms)
0.10 1.00
I2t
10.00
4/12 Doc ID 7474 Rev 10






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