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J110 (Fairchild Semiconductor) : Total 7 Pages

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J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
3
1 TO-92
1. Drain 2. Source 3. Gate
2
1 SuperSOT-3
Marking: I8
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
-25
10
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
IG = -10µA, VDS = 0
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 100°C
VDS = 15V, ID = 10nA
108
109
110
On Characteristics
IDSS
Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0
108
109
110
rDS(on)
Drain-Source On Resistance
VDS 0.1V, VGS = 0
108
109
110
Small Signal Characteristics
Cdg(on)
Csg(off)
Drain Gate & Source Gate On
Capacitance
Cdg(on)
Drain-Gate Off Capacitance
Csg(off)
Source-Gate Off Capacitance
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VDS = 0, VGS = 0, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
Min. Max. Units
-25
-3.0
-200
-3.0 -10
-2.0 -6.0
-0.5 -4.0
V
nA
nA
V
V
V
80 mA
40 mA
10 mA
8.0
12
18
85 pF
15 pF
15 pF
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002



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Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"
Max.
J108 - 110
*MMBFJ108
625 350
5.0 2.8
125
357 556
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002



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Typical Characteristics
Common Drain-Source
100
V GS = 0 V
- 2.0 V
80
- 1.0 V
- 3.0 V
60
40
20
0
0
- 4.0 V
- 5.0 V
TA = 25°C
TYP V GS(off) = - 5.0 V
0.4 0.8 1.2 1.6
VDS - DRAIN-SOURCE VOLTAGE (V)
2
Figure 1. Common Drain-Source
Parameter Interactions
100 I DSS @ VDS = 5.0V, VGS = 0 PULSED
50 r DS @ V DS = 100mV, VGS = 0
V GS(off) @ V DS = 5.0V, I D = 3.0 nA
r DS
10
5
I DSS
1,000
500
100
50
_ 0.1
_ 0.5 _ 1
_5
_
10
10
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
Figure 2. Parameter Interactions
Common Drain-Source
100
f = 0.1 - 1.0 MHz
C iss (V DS = 5.0V)
10
C rss (VDS = 0 )
0 -4 -8 -12 -16 -20
V GS - GATE-SOURCE VOLTAGE (V)
Figure 3. Common Drain-Source
Common Drain-Source
50
TA = 25°C
40 TYP V GS(off) = - 0.7 V
30
V GS = 0 V
20 - 0.1 V
- 0.2 V
- 0.3 V - 0.4 V - 0.5 V
10
0
01234
VDS - DRAIN-SOURCE VOLTAGE (V)
Figure 4. Common Drain-Source
5
Normalized Drain Resistance
vs Bias Voltage
100
50
VGS(off) @ 5.0V, 10 µA
r DS
20
r DS =
1
-___V_G_S___
10 V GS(off)
5
2
1
0 0.2 0.4 0.6 0.8 1
VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V)
Figure 5. Normalized Drain Resistance vs
Bias Voltage
©2002 Fairchild Semiconductor Corporation
Noise Voltage vs Frequency
100
50
VDG = 10V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f 1.0 kHz
10
5
I D = 10 mA
I D = 1.0 mA
1
0.01 0.03 0.1
0.5 1 2
10
f - FREQUENCY (kHz)
100
Figure 6. Noise Voltage vs Frequency
Rev. B1, November 2002



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Typical Characteristics (Continued)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
10
TA = 25°C
8 VDD = 1.5V
V GS(off)= - 12V
6
I D = 30 mA
4
I D = 10 mA
2
0
0 -2 -4 -6 -8 -10
VGGSS((ooffff)) - GATE-SOURCE CUTOFF VOLTAGE (V)
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
Switching Turn-On Time
vs Drain Current
50
40 V GS(off) = - 8.5V
30
20
TA = 25°C
VGS(off) = - 5.5V
V GS(off) = - 3.5V
10 VDD = 1.5V
V GS(off)= - 12V
0
0 5 10 15 20
I D - DRAIN CURRENT (mA)
25
Figure 8. Switching Turn-On Time vs Drain Current
On Resistance vs Drain Current
100
50 VGS = 0
V GS(off)= - 3.0V
125°C
10
125°C
5
25°C
25°C
- 55°C
V GS(off)= - 5.0V
1
1 10 100
I D - DRAIN CURRENT (mA)
Figure 9. On Resistance vs Drain Current
Output Conductance
vs Drain Current
100
V DG = 5.0V
10V
VGS(off) 5.0V
15V
20V
- 4.0V
10V
10 15V
5.0V
10V
20V 15V
- 2.0V
20V
T A = 25°C
1
0.1
- 1.0V
f = 1.0 kHz
1 10
I D - DRAIN CURRENT (mA)
Figure 10. Output Conductance vs Drain Current
Transconductance
vs Drain Current
100
TA = 25°C
V DG = 10V
f = 1.0 kHz
TA = - 55°C
T A = 25°C
TA = 125°C
10
1
0.1
V GS(off) = - 1.0V
VGS(off) = - 3.0V
V GS(off) = - 5.0V
1
I D - DRAIN CURRENT (mA)
10
Figure 11. Transconductance vs Drain Current
700
600
500
400 S uperS O T-3
T O -92
300
200
100
0
0 25 50 75 100
o
TEMPERATURE ( C)
125
150
Figure 12. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002






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