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J109 (NXP) : Total 7 Pages

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DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30



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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
FEATURES
High speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (<8 for J108).
APPLICATIONS
Analog switches
Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN SYMBOL
1g
2s
3d
DESCRIPTION
gate
source
drain
1
handbook, halfpage2
3
g
MAM197
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
IDSS drain current
J108
J109
J110
Ptot total power dissipation
CONDITIONS
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 5 V
up to Tamb = 50 °C
MIN. MAX. UNIT
− ±25 V
3 10
2 6
0.5 4
V
V
V
80
mA
40
mA
10
mA
400 mW
1996 Jul 30
2



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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
VGSO
VGDO
IG
Ptot
Tstg
Tj
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
open drain
open source
up to Tamb = 50 °C
MIN.
65
MAX.
±25
25
25
50
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)GSS
VGSoff
IDSS
IGSS
IDSX
RDSon
gate-source breakdown voltage
gate-source cut-off voltage
J108
J109
J110
drain current
J108
J109
J110
gate leakage current
drain-source cut-off current
drain-source on-state resistance
J108
J109
J110
CONDITIONS
IG = 1 µA; VDS = 0
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 15 V
VGS = 15 V; VDS = 0
VGS = 10 V; VDS = 5 V
VGS = 0; VDS = 100 mV
MIN.
3
2
0.5
80
40
10
TYP.
MAX.
25
10
6
4
UNIT
V
V
V
V
V
mA
mA
mA
3 nA
3 nA
8
12
18
1996 Jul 30
3



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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
DYNAMIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Cis input capacitance
Crs reverse transfer capacitance
Switching times; see Fig.2
CONDITIONS
VDS = 0; VGS = 10 V; f = 1 MHz
VDS = 0; VGS = 0; f = 1 MHz;
Tamb = 25 °C
VDS = 0; VGS = 10 V; f = 1 MHz
td delay time
ton turn-on time
ts storage time
toff turn-off time
note 1
Note
1. Test conditions for switching times are as follows:
VDD = 1.5 V; VGS = 0 to VGSoff (all types)
VGSoff = 12 V; RL = 100 (J108)
VGSoff = 7 V; RL = 100 (J109)
VGSoff = 5 V; RL = 100 (J110).
TYP.
15
50
MAX.
30
85
UNIT
pF
pF
8 15 pF
2 ns
4 ns
4 ns
6 ns
handbook, halfpage
VDD
50
0.1 µF
10 nF
10 µF
RL
DUT
SAMPLING
SCOPE
50
50
MGE773
Fig.2 Switching circuit.
1996 Jul 30
4






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