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J106 (Vishay Telefunken) : Total 5 Pages

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N-Channel JFETs
J105/106/107
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J105
J106
J107
VGS(off) (V)
–4.5 to –10
–2 to –6
–0.5 to –4.5
rDS(on) Max (W) ID(off) Typ (pA)
3 10
6 10
8 10
tON Typ (ns)
14
14
14
FEATURES
BENEFITS
D Low On-Resistance: J105 < 3 W
D Fast Switching—tON: 14 ns
D Low Leakage: 10 pA
D Low Capacitance: 20 pF
D Low Insertion Loss
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J105/106/107 are high-performance JFET analog
switches designed to offer low on-resistance and fast
switching. rDS(on) <3 W is guaranteed for the J105 making this
device the lowest of any commercially available JFET.
The low cost TO-226AA (TO-92) plastic package is available
in a wide range of tape-and-reel options (see Packaging
Information). For similar products in TO-206AC (TO-52)
packaging, see the U290/291 data sheet.
TO-226AA
(TO-92)
D1
S2
G3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
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J105/106/107
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J105
J106
J107
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Currentb
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 5 V, ID = 1 mA
VDS = 15 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 10 V, ID = 25 mA
VDS = 5 V, VGS = 10 V
TA = 125_C
VGS = 0 V, ID = 1 mA
IG = 1 mA , VDS = 0 V
35 25
25
4.5 10 2
500 200
0.02
3
10
0.01
0.01
3
5
3
0.7
25
6 0.5 4.5
V
100 mA
3 3
nA
33
6 8W
V
Common-Source Forward
Transconductanceb
Common-Source
Output Conductanceb
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
Switching
gfs
gos
rds(on)
Ciss
Crss
en
VDS = 10 V, ID = 25 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = 0 V
f = 1 MHz
VDS = 0 V, VGS = 10 V
f = 1 MHz
VDG = 10 V, ID = 25 mA
f = 1 kHz
55
5
120
20
3
mS
3 6 8W
160 160 160
pF
35 35 35
nV
Hz
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 1.5 V, VGS(H) = 0 V
See Switching Diagram
6
8
5
9
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
ns
NVA
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7-2
Document Number: 70230
S-04028Rev. D, 04-Jun-01



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J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
10 2 .0
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 10 V, VGS = 0 V
8 1.6
On-Resistance vs. Drain Current
20
TA = 25_C
16
6
rDS
IDSS
1.2
12 VGS(off) = 3 V
4 0.8
2 0.4
0
0 2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
10
ID = 10 mA
rDS changes X 0.7%/_C
8
0
10
6 VGS(off) = 3 V
5 V
4
8 V
2
0
55 35 15 5 25 45 65 85 105 125
TA Temperature (_C)
Turn-On Switching
tr approximately independent of ID
VDD = 1.5 V, RG = 50 W
VGS(L) = 10 V
8
4
0
10
5 V
8 V
100
ID Drain Current (mA)
1000
Output Characteristics
500
VGS(off) = 5 V
VGS = 0 V
400
0.5 V
300 1.0 V
1.5 V
200
2.0 V
100 2.5 V
3.0 V
0
2 4 6 8 10
VDS Drain-Source Voltage (V)
Turn-Off Switching
20
td(off) independent of device VGS(off)
VDD = 1.5 V, VGS(L) = 10 V
16
tr
td(on) @ ID = 30 mA
8
4
td(on) @ ID = 10 mA
0
0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
Document Number: 70230
S-04028Rev. D, 04-Jun-01
12
8
4
0
0
tf
VGS(off) = 8 V
td(off)
VGS(off) = 3 V
10 20 30
ID Drain Current (mA)
40
50
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J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Capacitance vs. Gate-Source Voltage
150
VDS = 0 V
f = 1 MHz
120
Transconductance vs. Drain Current
200
VGS(off) = 5 V
VDS = 10 V
f = 1 kHz
100
90
Ciss
60
TA = 55_C
10 125_C
25_C
Crss
30
0
0 4 8 12 16 20
VGS Gate-Source Voltage (V)
Output Conductance vs. Drain Current
20
VGS(off) = 5 V
10
VDS = 10 V
f = 1 kHz
1
1 10
ID Drain Current (mA)
Noise Voltage vs. Frequency
100
VDG = 10 V
100
TA = 55_C
1 125_C
25_C
10 ID = 10 mA
0.1
1
10
ID Drain Current (mA)
100
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
300 30
gfs and gos @ VDS = 10 V
VGS = 0 V, f = 1 kHz
260 24
220 gfs
gos
180
18
12
140 6
100
0
2 4
6 8
VGS(off) Gate-Source Cutoff Voltage (V)
0
10
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7-4
1
10
100 1 k 10 k
f Frequency (Hz)
100 k
100 nA
10 nA
1 nA
100 pA
Gate Leakage Current
TA = 125_C
100 mA
IGSS @ 125_C
25 mA
TA = 25_C
100 mA
25 mA
10 pA
IGSS @ 25_C
1 pA
0
4 8 12 16
VDG Drain-Gate Voltage (V)
20
Document Number: 70230
S-04028Rev. D, 04-Jun-01






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