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D1006UK (Seme LAB) : Total 4 Pages

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TetraFET
D1006UK
MECHANICAL DATA
B
CA
E 123
FG
654
J
D
H
M
QN
PIN 1
PIN 3
PIN 5
SOURCE
SOURCE
GATE
DIM mm
A 9.09
B 19.3
C 45°
D 5.71
E 1.65R
F 9.78
G 20.32
H 19.30
J 1.52R
K 10.77
M 22.86
N 3.17
O 0.13
P 4.19
Q 6.35
K OP
DV
PIN 2
PIN 4
PIN 6
DRAIN
SOURCE
SOURCE
Tol.
0.13
0.13
5°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
Inches
0.358
0.760
45°
0.225
0.065R
0.385
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
Tol.
0.005
0.005
5°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
120W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 14 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
220W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
30A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00



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D1006UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainSource
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS
h
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 120W
VDS = 28V
f = 175MHz
VDS = 0
VDS = VGS
ID = 6A
IDQ = 1.2A
1
4.8
14
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V
VDS = 28V
VDS = 28V
VGS = 5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
6 mA
1 mA
7V
S
dB
%
360 pF
180 pF
15 pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 0.8°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00



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D1006UK
 
 
 

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Figure 1.
Power Output and Efficiency vs.Input Power
Figure 2.
Power Output and Gain vs. Input Power


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Figure 3.
IMD vs Output Power
D1006UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175
ZWS
0.5 - j0.6
ZWL
1.7 - j0.1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00



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D1006UK
G a te -B ia s
100K
4 0 -2 0 0 p F
T1
47pF
T2
1 6 -1 0 0 p F
1K 10nF
10K
D 1006K
6x6
mm
c o n ta c t
pad
6x6
mm
c o n ta c t
pad
15
+28V
L2
1 .5 K
1nF 10nF 100nF 10uF
L1
T3
35pF
47pF
T4
4 0 -2 0 0 p F
1 6 -1 0 0 p F
175 MHz Test Fixture
Substrate 1.6mm PTFE/glass, Er = 2.5
All microstrip lines W = 5mm
T1 10mm
T2 23.5mm
T3 25mm
T4 6mm
L1 9 turns 20swg encamelled copper wire, 6mm i.d.
L2 11 turns 19swg enamelled copper wire on Fair-Rite FT82 ferrite
core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00






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