DatasheetBay.com



2N3669 (Digitron Semiconductors) : Total 4 Pages

No Preview Available !

[ Download PDF for PC ]

2N3668-2N3670,
2N4103
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Non-repetitive peak reverse voltage
VRM
Peak repetitive reverse voltage
VRRM
Peak forward blocking voltage
Forward current for case temperature TC = +80°C
@ average DC value at a conduction angle of 180°
RMS value
Peak surge current for one cycle of applied voltage
60 Hz (sinusoidal), TC = 80°C
50 Hz (sinusoidal), TC = 80°C
Fusing current
(TJ = -40 to +100°C, t = 1 to 8.3ms)
VFBOM
IFAV
IFRMS
IFM
I2t
Rate of change of forward current
VFB = VBOO, IGT = 200mA, 0.5ns rise time
Peak gate power for 10ns duration
di/dt
PGM
Average gate power
PGAV
Storage temperature
Tstg
Operating case temperature
TC
*Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.
* Temperature reference point is within 1/8” of the center of the underside of unit.
2N3668
150
100
100
2N3669
330
200
200
2N3670
660
400
400
8
12.5
200
200
170
170
200
40
0.5
-40 to +125
-40 to +100
2N4103
700
600
600
Units
V
V
V
A
A
A2s
A/µs
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
2N3668
Min Typ Max
Peak repetitive blocking voltage @ TC =
100°C
VDROM
100 -
-
Forward peak blocking current
@TC = 100°C, VD = VDROM
IDOM - 0.2 2
Reverse peak blocking current
@ TC = 100°C, VR = VRROM
IROM - 0.05 1
Forward voltage drop @ 25A
TC = 25°C
VF - 1.5 1.8
DC gate-trigger current
@ TC = 25°C
IGT 1 20 40
DC gate-trigger voltage
@ TC = 25°C
VGT - 1.5 2
Holding current @ TC = 25°C
IH 0.5 25 50
Critical rate of forward voltage
VF = VBOO, exponential rise
TC = 100°C
dv/dt
10 100
-
2N3669
Min Typ Max
200 -
-
- 0.25 2.5
- 0.1 1.25
- 1.5 1.8
1 20 40
- 1.5
0.5 25
2
50
10 100
-
2N3670
Min Typ Max
400 -
-
- 0.3 3
- 0.2 1.5
- 1.5 1.8
1 20 40
- 1.5
0.5 25
2
50
10 100
-
2N4103
Min Typ Max
600 -
-
- 0.35 4
- 0.3 3
- 1.5 1.8
1 20 40
- 1.5 2
0.5 25 50
10 100
-
Units
V
mA
mA
V
mA
V
mA
V/µs
Rev. 20130116



No Preview Available !

[ Download PDF for PC ]

2N3668-2N3670,
2N4103
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTFIERS
ELECTRICAL CHARACTERISTICS (@ maximum ratings and indicated case temperature (TC)
Characteristic
Symbol
2N3668
Min Typ Max
2N3669
Min Typ Max
Min
Turn-on time
(delay time + rise time)
VD = VDROM, IT = 8A, IG = 200mA, 0.1µs rise
time, TC = 25°C
ton
- 1.25 -
- 1.25 -
-
Turn-off time
(reverse recovery time + gate recovery time)
IF = 8A, 50ns pulse width, dvFS/dt = 20V/µs,
dir/dt = 30A/µs, IGT = 200mA, TC = 80°C
toff
- 20 50 - 20 50 -
Thermal resistance
Junction to case
RӨJC - - 1.7 - - 1.7 -
2N3670
Typ
1.25
Max
-
20 50
- 1.7
MECHANICAL CHARACTERISTICS
Case:
TO-3
Marking:
Body painted, alpha-numeric
Pin out:
See below
2N4103
Min Typ Max
- 1.25 -
- 20 50
- - 1.7
Units
µs
µs
°C/W
Rev. 20130116



No Preview Available !

[ Download PDF for PC ]

High-reliability discrete products
and engineering services since 1977
2N3668-2N3670,
2N4103
SILICON CONTROLLED RECTFIERS
Fig. 1 – Peak surge current vs. surge current duration
Fig. 2 - Instantaneous forward current vs.
Instantaneous forward voltage drop
Rev. 20130116



No Preview Available !

[ Download PDF for PC ]

High-reliability discrete products
and engineering services since 1977
2N3668-2N3670,
2N4103
SILICON CONTROLLED RECTFIERS
Rev. 20130116





[ Download PDF for PC ]





0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
* 2015 :: DatasheetBay.com :: DatasheetBay